Actual refractory period at bias_refr = +235 on IMX636 (EVK4), and can it be shorter?

Actual refractory period at bias_refr = +235 on IMX636 (EVK4), and can it be shorter?

I'm using an EVK4 (Sony IMX636) event camera and have a question about the refractory period setting.

I set bias_refr to +235. As far as I know, this is the maximum allowed value and gives the shortest refractory period. I have two questions:

1. What is the actual refractory period at bias_refr = +235?
   Is there an official or measured value, in µs, for this setting? A table or curve that maps bias_refr values to refractory time would also help, if one exists.
2. Is there a way to make the refractory period shorter than the +235 setting allows?
   For example:
   - Is there a register-level setting or hidden parameter beyond the range exposed in the SDK?
   - Can other biases (e.g., bias_fo, bias_hpf, bias_diff_on/off) indirectly reduce the effective dead time of a pixel?
   - Or is +235 a hard hardware limit of the IMX636?

Any information, measurement results or references would be greatly appreciated.

Thank you!